According to a report by the Physicist Organization Network on April 19 (Beijing time), researchers from the University of California, Berkeley and the Hsinchu Nano Components Laboratory in Taiwan used new electronic memory technologies created by nano dots to write and erase data. It is 10 to 100 times faster than today's mainstream charge storage memory products, breaking the world record. The relevant research results were published in the latest edition of the American Physical Society's Applied Physics Letters.
The system embeds discrete (non-overlapping) silicon nanodots in a layer of non-conductive material, each spanning approximately 3 nanometers. Each nano-dots function as a single memory bit. To control memory operation, the researchers covered this layer of material with a thin layer of metal to form a metal gate to control the transistor's "on" and "off" states.
One of the co-authors of this paper, Xie Jiamin, a researcher at the Hsinchu Nano-elements Laboratory in Taiwan, said: “The metal gate structure is a mainstream technology for the development of nano-complementary metal oxide semiconductor (CMOS) memory. The new system uses many Discrete silicon nanodots are used for charge storage and deletion.These charges enter (data write) and leave (data erase) many discrete nanodots in a fast and simple way."
Researchers selectively activate specific regions around the metal layer of the metal gate memory by using ultra-short pulses of green laser light. Since sub-millisecond bursts of lasers are very simple and accurate, researchers are able to accurately create switches for each nanometer point. The researchers explained that this method of memory storage is quite powerful. Even if a single charge in the nanometer region fails to operate, it will hardly affect other charges, and thus a stable and long-term data storage platform can be established.
The researchers said that the materials and processes used in related equipment are also compatible with the current mainstream integrated circuit technology, which can not only meet the current CMOS process production line, but also can be applied to the structure of other advanced equipment. Clearly, the record speed, low voltage, and ultra-small nano-dot characteristics of such systems will challenge the memory of current electronic computers and other electronic devices. (Reporter Hualing)
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