The electrolyte synaptic transistor based on topology conversion material realized by physics

With the rapid increase in the amount of data in human society and the increase in the complexity of data types, the efficiency of neural network information processing models similar to the human brain will be significantly better than that of traditional architecture computers. The development of electronic devices that meet the characteristics of neuromorphic computing and the construction of large-scale artificial neural networks has become an important direction for the future development of information technology. The physical properties of functional oxide materials are very sensitive to foreign ions. Ion exchange at the interface through the method of electrolyte control can effectively control the change of its electrical conductivity properties, and it has gradually become a potential solution in the design and research of neuromorphic devices.

The L03 group led by the researcher of the Institute of Physics of the Chinese Academy of Sciences / Key Laboratory of Photophysics of the National Research Center for Condensed Matter Physics in Beijing and Yang Guozhen, an academician of the Chinese Academy of Sciences, has been working on the preparation of high-quality perovskite heterojunctions and their physical properties by laser molecular beam epitaxy In the research of the research group, Ge Chen, an associate researcher of the research group, realized the resistance change of more than four orders of magnitude by adjusting the LSMO film through ionic liquids, and proposed that the electrochemical ion exchange process at the interface of water and oxide in ionic liquids plays a major role (Adv. Mater. Interfaces 2, 1500407 (2015)); After that, the A-position-deleted perovskite structure WO3, which can accommodate a large number of intercalated ions, was selected as the model system for H + ionic liquid regulation and design of synaptic transistors (Adv. Mater. 30, 1801548 ( 2018); J. Mater. Chem. C 5, 11694 (2017)); recently, high-performance synaptic transistors have been designed with O2-ionic liquid-controlled topology conversion materials (SrFeO2.5? SrFeO3), and some progress has been made.

The researchers prepared high-quality SrFeO2.5 thin films by laser molecular beam epitaxy, and used ionic liquids to control the insertion and precipitation of O2- ions. In SrFeO2.5, the topological conversion of the perovskite phase and the perovskite phase was realized by the electric field. . The phase transition process is accompanied by huge changes in crystal structure, conductivity state and optical absorption characteristics, and the structure and performance after phase change can be maintained for a long time (no change within one year). Compared with the retention characteristics (in the order of minutes-hours) of the synaptic transistors based on H + injection, which are mainly studied now, the retention characteristics of this type of topology conversion materials are very excellent.

Based on the electrolyte control characteristics of this topological phase conversion material, the researchers prepared the SrFeO2.5 film as an electrolyte transistor, using the SrFeOX film as the channel material, and inserting and precipitating into the channel under the strong electric field of the ionic liquid / oxide interface O2-ion achieves reversible changes in multiple stable conductance states. The device conductance is very low (~ 5 nS), which provides a good device foundation for the construction of low-power large-scale neural networks. Further, they realized important functions of artificial synaptic devices, including the increase and decrease of synaptic weights, the short-term and long-term memory plasticity of synapses, and the temporal plasticity of synapses. In addition, they used a back propagation algorithm neural network simulator to construct a three-layer artificial neural network based on this ferrite synaptic transistor to achieve high-precision recognition of the standard handwritten digit library (MNIST). The synaptic transistors based on topological phase-conversion materials proposed in this work for the first time have excellent comprehensive performance, and provide new ideas for the research of new high-performance neural synaptic devices. The main personnel who completed the work included master student Liu Changxiang and associate professor Zhou Qingli (First Normal University), researcher Gu Lin team (Institute of Physics), etc. The research results were published in "Advanced Materials" (Advanced Materials).

The above work was supported by the National Key Research and Development Program, the National Natural Science Foundation of China, the Chinese Academy of Sciences, etc., and was supported by the Youth Promotion Association of the Chinese Academy of Sciences.

Figure 1. Ionic liquid regulation induces topological phase transition

Figure 2. Basic properties of synaptic transistors

Figure 3. SrFeOx synaptic transistor array long-range graphical memory process

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