On-resistance is lower than SiC! Oxygen Oxide Diodes Developed by FLOSFIA
The Japanese venture company FLOSFIA (headquarters: Kyoto City) developed a Schottky barrier diode (SBD) with a withstand voltage of 531V and an ON resistance of only 0.1mΩcm2. The company claims that on-resistance is lower than "commercially available SiC SBD." Based on this result, the company will begin to supply 600V diode samples from the end of 2015. The package used is a TO-220 package commonly used for power components. The company is also considering mass production before 2018.
Pressure resistance and on-resistance
SBD features
Compared with the new generation of power semiconductor materials SiC (silicon carbide) and GaN (gallium nitride) currently under development, it is possible to produce high voltage, low loss power semiconductor devices (power devices for short) at low cost. ), thus becoming the focus of attention. In thorium oxide, FLOSFIA has studied "alpha-type" with a corundum-type structure. The company uses the "MIST EPITAXY method" to make alpha-type yttrium oxide. This method is based on the “MIST CVD method†developed by Kyoto University professor Shizuo Fujita, and incorporates autonomous technologies such as reducing the concentration of impurities and increasing the number of layers. The feature of the MIST EPITAXY method is that it does not require the use of expensive vacuum devices.
Thin base layer to reduce on-resistance
The SBD developed this time consists mainly of two yttrium oxide layers. The lower layer is a "base material" (base layer) and the upper layer is a "semiconductor layer." By processing the base layer into a film of 20 μm or less, the on-resistance is reduced. The resistance of the tantalum oxide film can be reduced to 1/100 of a commercially available SiC substrate.
By reducing the thickness to less than 20 μm, the thermal resistance is also reduced. According to FLOSFIA, the thermal conductivity of yttrium oxide is relatively low, and thinning solves this problem.
This time, FLOSFIA used the MIST EPITAXY method to set up the base layer and the semiconductor layer on the sapphire substrate, and then removed the sapphire substrate, and then through the processes of etching and metallization, the SBD was produced.
In addition to the 531V product, the company also produced a SBD with a withstand voltage of 855V and an on-resistance of 0.4mΩcm2.
For details, FLOSFIA will be presented at IWGO, the International Society for Antimony Oxide organized in November 2015. (Reporter: Ujinjin)
SBD production process
Titanium Dioxide Anatase,Titanium Dioxide Rutile,Titanium Dioxide Chloride Process,Titanium Dioxide Sulphate Process
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